Unterpremstaetten, Austria — (METERING.COM) — July 11, 2008 – austriamicrosystems business unit Full Service Foundry has announced that its state-of-the art 0.35µm High-Voltage CMOS process technology H35 is now offering 4kV ESD (Electrostatic Discharge) protection. The new silicon proven H35 periphery library guarantees a 4kV HBM (Human Body Model) ESD protection compliant to the MIL-883E, Method 3015.7 and JEDEC JESD22-A114B ESD standards.
The new IO library cells with built-in ESD protection structures offer 4kV HBM ESD protection level for 50V maximum supply voltage and are available as an add-on to the current HIT-Kit version v3.72. Registered users may download the new periphery cells from the company’s technical web server.
“Proper ESD protection on both chip and system level is one of the utmost demands of our customers. Offering competitive ESD protection solutions enables us to serve our customers’ needs and demands in designing complex analog mixed-signal products with optimal ESD protection on chip level,” says Thomas Riener, General Manager, Full Service Foundry. “Dedicated ESD reviews and consulting services further enhance austriamicrosystems’ analog foundry portfolio.”
The 0.35µm High-Voltage CMOS technology is the first purely CMOS based High-Voltage process that matches BCD performance and chip sizes at much lower process complexity. It offers fully scalable High-Voltage NMOS and PMOS devices, floating logic libraries as well as a best-in-class power-on resistance. The process allows the integration of 3.3V, 5V, 20V, 50V and 120V devices on a single chip, which makes it the ideal technology for complex analog/mixed-signal designs in power management, automotive or medical applications.