Colorado Springs, CO, U.S.A. — (METERING.COM) — January 29, 2009  – A new 256 kb, 2.7 to 3.6 V non volatile F-RAM memory device with a high speed serial I2C memory interface, the FM24L256, has been launched, offering high performance data collection in a tiny, 8-pin package and cutting costs and board space in a range of applications including metering.

The FM24L256, from semiconductor solution developer and supplier Ramtron International Corporation, employs the company’s advanced ferroelectric process. F-RAM memories read and write like RAM and provide reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories.

The FM24L256 performs write operations at bus speed without write delays and the next bus cycle can start immediately without the need for data polling. The device offers write endurance that is orders of magnitude higher than EEPROM and uses much lower power during writes than EEPROM, since write operations do not require an internally elevated power supply voltage for write circuits.

These capabilities make the FM24L256 ideal for non volatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24L256 provides substantial benefits to users of serial EEPROM in a hardware drop-in replacement. The FM24L256 is available in industry standard 8-pin SOIC package, operates from 2.7 to 3.6 volts, and is rated over the industrial temperature range of -40 degrees C to +85 degrees C.